• DocumentCode
    2006975
  • Title

    Voltage and Temperature Dependence of Interface Trap Generation by Hot Electrons in P- and N- Poly Gated MOSFETs

  • Author

    Hsu, C.C.-H. ; Ning, T.H.

  • Author_Institution
    IBM Research Div., T.J. Watson Research Center, NY
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    17
  • Lastpage
    18
  • Keywords
    Annealing; Charge carrier processes; Electron traps; MOSFET circuits; Secondary generated hot electron injection; Silicon; Stress; Temperature dependence; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.705968
  • Filename
    705968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2006975