Post-metallization H2 annealing of electrically active defects in Ta2O5/nitrided Si stacks

The effect of H₂ post-metallization annealing (PMA) on the electrical behavior of sputtered Ta₂O₅ layers on nitrogen ion implanted Si is investigated. The high densities of oxide charge interface and slow states typical of as-deposited stacks are strongly reduced by one to two orders of magnitude after annealing. H₂ treatment affects both bulk Ta₂O₅ and interfacial layers but is more efficient in annealing electrically active defects in nitrided layer. The effect of defect annealing on the leakage currents and conduction mechanisms is also discussed