Fabrication of micromechanically-modulated MgO magnetic tunnel junction sensors

Author

Jaramillo, Gerardo ; Chan, Mei Lin ; Guedes, André ; Horsley, David A.

Author_Institution

Univ. of California, Davis, CA, USA

fYear

2010

fDate

24-28 Jan. 2010

Firstpage

667

Lastpage

670

Abstract

We have developed a hybrid magnetoresistive (MR)-MEMS sensor based on the monolithic integration of magnetic thin films and SOI MEMS fabrication techniques. MgO magnetic tunnel junctions (MTJ) on bulk micromachined silicon structures form a hybrid sensing platform in which the MEMS structure is used to mechanically modulate the magnetic field signal detected by the MTJ. We demonstrate the modulation of DC magnetic field through the mechanical motion of the cantilever at resonance. This allows for the improved detection of small DC or low frequency magnetic signals modulated into the high frequency region where the 1/f noise is lower.

Keywords

magnesium compounds; magnetic sensors; microfabrication; microsensors; signal detection; silicon-on-insulator; tunnelling magnetoresistance; MgO; SOI MEMS fabrication techniques; bulk micromachined structures; cantilever; hybrid magnetoresistive MEMS sensor; magnetic field signal; magnetic thin films; magnetic tunnel junctions; mechanical motion; Fabrication; Frequency; Magnetic fields; Magnetic modulators; Magnetic resonance; Magnetic sensors; Magnetic tunneling; Magnetoresistance; Micromechanical devices; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on

Conference_Location

Wanchai, Hong Kong

ISSN

1084-6999

Print_ISBN

978-1-4244-5761-8

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2010.5442320

Filename

5442320