DocumentCode
2008141
Title
Thermal and electrical properties of Czochralski grown germanium-silicon alloys
Author
Yonenaga, I. ; Goto, Tetsu ; Tang, X.F. ; Yamaguchi, S.
Author_Institution
Inst. of Mater. Res., Tohoku Univ., Sendai, Japan
fYear
1999
fDate
Aug. 29 1999-Sept. 2 1999
Firstpage
436
Lastpage
439
Abstract
The thermoelectric parameters, including the thermal conductivity, electrical conductivity and Seebeck coefficient, of high quality crystals of Ge/sub 1-x/Si/sub x/ alloys in various composition 0\n\n\t\t
Keywords
Ge-Si alloys; Seebeck effect; crystal growth from melt; electrical conductivity; electron-phonon interactions; gallium; semiconductor growth; semiconductor materials; thermal conductivity; thermoelectric power; 700 C; Czochralski grown; Ge/sub 1-x/Si/sub x/ alloys; GeSi:Ga; Seebeck coefficient; band gap energy; carrier concentration; electrical conductivity; electrical properties; high quality crystals; thermal conductivity; thermal resistivity; thermoelectric parameters; Crystals; Germanium alloys; Phonons; Photonic band gap; Scattering; Silicon alloys; Temperature; Thermal conductivity; Thermal resistance; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location
Baltimore, MD, USA
ISSN
1094-2734
Print_ISBN
0-7803-5451-6
Type
conf
DOI
10.1109/ICT.1999.843424
Filename
843424
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