A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process

Author

Sundaresan, R. ; Wei, C.C. ; Zamanian, M. ; Chen, F.S. ; Miller, R.O. ; Hodges, R.L. ; Gaskins, W. ; Sagarwala, P. ; Nguyen, L. ; Huang, J. ; Spinner, C. ; Stagaman, G.S. ; Hata, W. ; Lin, Y.S. ; Bryant, F. ; Liou, F.T.

Author_Institution

SGS-Thomson Microelectronics, TX

fYear

1991

fDate

28-30 May 1991

Firstpage

Lastpage

Keywords

Current measurement; Diodes; Filling; Implants; Metallization; Plugs; Random access memory; Resistors; Tin; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on

Conference_Location

Oiso, Japan

Type

DOI

10.1109/VLSIT.1991.705974

Filename

705974

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