DocumentCode :
2008193
Title :
A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process
Author :
Sundaresan, R. ; Wei, C.C. ; Zamanian, M. ; Chen, F.S. ; Miller, R.O. ; Hodges, R.L. ; Gaskins, W. ; Sagarwala, P. ; Nguyen, L. ; Huang, J. ; Spinner, C. ; Stagaman, G.S. ; Hata, W. ; Lin, Y.S. ; Bryant, F. ; Liou, F.T.
Author_Institution :
SGS-Thomson Microelectronics, TX
fYear :
1991
fDate :
28-30 May 1991
Firstpage :
29
Lastpage :
30
Keywords :
Current measurement; Diodes; Filling; Implants; Metallization; Plugs; Random access memory; Resistors; Tin; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
DOI :
10.1109/VLSIT.1991.705974
Filename :
705974
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2008193
