• DocumentCode
    2008688
  • Title

    Junction temperature measurement of IGBTs using short circuit current

  • Author

    Xu, Zhuxian ; Wang, Fred ; Ning, Puqi

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
  • fYear
    2012
  • fDate
    15-20 Sept. 2012
  • Firstpage
    91
  • Lastpage
    96
  • Abstract
    In this paper, a method is proposed to measure the junction temperatures of IGBT discrete devices and modules using short circuit current. Experimental results show that the short circuit current has good sensitivity, linearity and selectivity, which is suitable to be used as temperature sensitive electrical parameters (TSEP). Test circuit and hardware design are proposed for junction temperature measurement in single phase and three phase converters. By connecting a temperature measurement unit to the converter and giving a short circuit pulse, the IGBT junction temperature can be measured.
  • Keywords
    insulated gate bipolar transistors; power convertors; short-circuit currents; temperature measurement; IGBT discrete devices; hardware design; junction temperature measurement; short circuit current; single-phase converters; temperature sensitive electrical parameters; test circuit; three-phase converters; Calibration; Insulated gate bipolar transistors; Junctions; Logic gates; Short circuit currents; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
  • Conference_Location
    Raleigh, NC
  • Print_ISBN
    978-1-4673-0802-1
  • Electronic_ISBN
    978-1-4673-0801-4
  • Type

    conf

  • DOI
    10.1109/ECCE.2012.6342837
  • Filename
    6342837