DocumentCode
2009115
Title
Millisecond annealing for salicide formation: Challenges of NiSi agglomeration free process
Author
Gregoire, M. ; Beneyton, R. ; Morin, P.
Author_Institution
STMicroelectronics, Crolles, France
fYear
2011
fDate
8-12 May 2011
Firstpage
1
Lastpage
3
Abstract
Replacing conventional low temperature second rapid thermal anneal by a high temperature millisecond anneal has been introduced in the last technology node in order to improve device performance or reduce leakage. Highest temperature induce highest performance boost however this induces the destructing NiSi agglomeration phenomena. The influence of dopant, Si microstructure and NiSi phase have been deeply investigated to evaluate the best process condition.
Keywords
CMOS integrated circuits; annealing; nickel compounds; NiSi; agglomeration free process; millisecond annealing; salicide formation; Films; Nickel; Rapid thermal annealing; Silicides; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location
Dresden
ISSN
pending
Print_ISBN
978-1-4577-0503-8
Type
conf
DOI
10.1109/IITC.2011.5940280
Filename
5940280
Link To Document