DocumentCode
2009158
Title
A new level shifter in ultra deep sub-micron for low to wide range voltage applications
Author
Koo, Kyoung-Hoi ; Seo, Jin-Ho ; Ko, Myeong-Lyong ; Kim, Jae-Whui
Author_Institution
Design Core Dev. Team, Ssmsung Electron., Kyungki-Do, South Korea
fYear
2004
fDate
12-15 Sept. 2004
Firstpage
155
Lastpage
156
Abstract
A level shifter aimed at ultra low core voltage and wide range I/O voltage is designed using a 90nm CMOS process. Proposed level shifter uses analog circuit techniques and zero-Vt transistor with no extra process step, no static power and stable duty ratio make this level shifter suitable for ultra low core voltage and wide range I/O voltage applications. These techniques work even 0.6V core voltage, 1.65-3.6V I/O voltage within 45:55 duty ratio up to 200MHz.
Keywords
CMOS analogue integrated circuits; integrated circuit design; low-power electronics; transistors; 0.6 V; 1.65 to 3.6 V; 200 MHz; 90 nm; CMOS; analog circuit; new level shifter; ultra deep sub-micron; ultra low core voltage; voltage applications; wide range I/O voltage; zero-Vt transistor; Analog circuits; Bridge circuits; Large Hadron Collider; Logic devices; Low voltage; MOS devices; Signal design; Switches; Threshold voltage; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
SOC Conference, 2004. Proceedings. IEEE International
Print_ISBN
0-7803-8445-8
Type
conf
DOI
10.1109/SOCC.2004.1362388
Filename
1362388
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