Preparation of B-Si films by chemical vapor deposition

Author

Mukaida, M. ; Tsunoda, T. ; Imai, Y.

Author_Institution

Nat. Inst. of Mater. & Chem. Res., Ibaraki, Japan

fYear

1999

fDate

Aug. 29 1999-Sept. 2 1999

Firstpage

667

Lastpage

670

Abstract

B-Si films were prepared by chemical vapor deposition (CVD) using high-frequency induction heating. Mixed gases of silane and diborane were used as source materials. The deposits were prepared on a graphite substrates at the substrate temperature between 1188 and 1616 K under the total pressure in the CVD chamber of 2.7 kPa. The molar ratio of B/Si in the source gas was 6 to 60. At lower B/Si Ratio in the source gas, SiB/sub 4/ was formed. SiB/sub 6/ and SiB/sub n/ could be also formed at the higher ratios of B/Si. And, the deposit was dependent on the substrate temperature. The deposit with higher B concentration was obtained with increasing the substrate temperature. The electrical properties such as Seebeck coefficient and electrical conductivity of the films were measured.

Keywords

CVD coatings; Seebeck effect; boron compounds; semiconductor growth; semiconductor thin films; silicon compounds; thermoelectric power; 1188 to 1616 K; B-Si; B-Si films; CVD chamber; Seebeck coefficient; chemical vapor deposition; electrical conductivity; electrical properties; high-frequency induction heating; substrate temperature; total pressure; Ceramics; Chemical vapor deposition; Conducting materials; Conductivity measurement; Electric variables measurement; Pollution measurement; Substrates; Temperature measurement; Thermal resistance; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1999. Eighteenth International Conference on

Conference_Location

Baltimore, MD, USA

ISSN

1094-2734

Print_ISBN

0-7803-5451-6

Type

conf

DOI

10.1109/ICT.1999.843475

Filename

843475