• DocumentCode
    20095
  • Title

    Microstructure and dielectric behavior of Bi2O3-doped KSr2Nb5O15 ceramics

  • Author

    Guoxin Hu ; Feng Gao ; Liangliang Liu ; Zhenqi Deng ; Zhengtang Liu

  • Author_Institution
    State Key Lab. of Solidification Process., Northwestern Polytech. Univ., Xi´an, China
  • Volume
    60
  • Issue
    7
  • fYear
    2013
  • fDate
    Jul-13
  • Firstpage
    1287
  • Lastpage
    1294
  • Abstract
    Bi2O3-doped KSr2Nb5O15(KSNB) ceramics with relative density higher than 96% were successfully prepared by sintering at 1300°C. The addition of Bi2O3 will decrease the tetragonal degree of the materials, improve the densification, and promote the grain growth of KSNB ceramics. Relaxation behavior can be observed in KSNB ceramics, which is attributed to the complex response of the polar nanoregions and matrices resulting from substitution of Bi3+ for Sr2+ and K+. Bi2O3-doped KSr2Nb5O15 ceramics show good temperature-dependence performance and high dielectric tunability. KSNB ceramics with 4.0 wt% added Bi2O3 show the maximum tunability, and capacitance changes with temperature meet the requirement of the X7R standard, which makes these ceramics promising candidate materials for multilayer capacitors and tunable phase shifters.
  • Keywords
    bismuth compounds; dielectric relaxation; ferroelectric ceramics; grain growth; potassium compounds; sintering; strontium compounds; KSr2Nb5O15:Bi2O3; capacitance; ceramics; densification; dielectric relaxation; dielectric tunability; grain growth; matrices; microstructure; multilayer capacitors; polar nanoregions; sintering; temperature 1300 degC; temperature dependence performance; tunable phase shifters;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/TUFFC.2013.2703
  • Filename
    6552381