Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements

Author

Gerlich, L. ; Ohsiek, S. ; Klein, C. ; Geiss, M. ; Friedemann, M. ; Kücher, P. ; Schmeisser, D.

Author_Institution

Fraunhofer Center for Nanoelectronic Technol., Dresden, Germany

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

A physical vapor deposition tool for 300 mm wafers was coupled with an angle resolved photoelectron spectroscopy tool (ARXPS) and used to study the growth of TaN single layer and TaN/Ta double layer diffusion barriers. The nitrogen content of TaN was adjusted by controlling the nitrogen flow and by varying the deposition power. We describe a process recipe that allows us to decrease the TaN thickness while still maintaining the Ta layer in the low resistivity α-phase. The process recipe was developed on blanket wafers and evaluated in a test structure for high performance CMOS products.

Keywords

CMOS integrated circuits; X-ray photoelectron spectra; diffusion barriers; integrated circuit interconnections; nitrogen; tantalum; tantalum compounds; vapour deposition; CMOS product; TaN-Ta; angle resolved photoelectron spectroscopy tool; blanket wafer; deposition power varying; double layer diffusion barrier; next technology node requirement; nitrogen content; nitrogen flow control; physical vapor deposition tool; size 300 mm; ultrathin barrier modification; Conductivity; Electrical resistance measurement; Hip; Nitrogen; Resistance; Silicides; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940322

Filename

5940322