CVD and ALD of Cobalt-tungsten alloy film as a novel Copper diffusion barrier

Author

Shimizu, Hideharu ; Sakoda, Kaoru ; Shimogaki, Yukihiro

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

To reduce resistivity of interconnect, to enhance electromigration life time, and to improve a step coverage of barrier layer, cobalt and cobalt-tungsten alloy film was deposited by chemical vapor deposition (CVD) or atomic layer deposition (ALD) using octacarbonyl dicobalt (Co₂(CO)₈) and biscyclopentadienyl cobalt (Cp₂Co) as precursors, respectively. We demonstrated to form conformal cobalt films on to trench pattern and we confirmed that CVD/ALD cobalt-tungsten films have good barrier properties against copper diffusion.

Keywords

atomic layer deposition; chemical vapour deposition; cobalt alloys; diffusion barriers; electrical resistivity; electromigration; integrated circuit interconnections; tungsten alloys; ALD; CVD; CoW; atomic layer deposition; barrier layer; biscyclopentadienyl cobalt; chemical vapor deposition; cobalt-tungsten alloy film; copper diffusion barrier; electromigration life time; interconnect resistivity; octacarbonyl dicobalt; Cobalt; Conductivity; Copper; Films; Substrates; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940343

Filename

5940343