• DocumentCode
    2010585
  • Title

    Gate-Induced Drain Leakage in Ldd and Fully-Overlapped Ldd Mosfets

  • Author

    Parke, S. ; Moon, J. ; Nee, P. ; Huang, J. ; Hu, C. ; Ko, P.K.

  • Author_Institution
    Department of Electrical Engineering and Computer Sciences, University of California
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    49
  • Lastpage
    50
  • Keywords
    Analytical models; Application software; Data mining; Doping profiles; Ice; MOSFETs; Moon; Random access memory; Semiconductor process modeling; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.705984
  • Filename
    705984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2010585