Cu damascene interconnects with an organic low-k fluorocarbon dielectric deposited by microwave excited plasma enhanced CVD

Author

Gu, X. ; Nemoto, T. ; Tomita, Y. ; Shirotori, A. ; Duyos-Mateo, R. ; Miyatani, K. ; Saito, A. ; Kobayashi, Y. ; Teramoto, A. ; Kuroki, S. ; Nozawa, T. ; Matsuoka, T. ; Sugawa, S. ; Ohmi, T.

Author_Institution

Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

An organic non-porous low-k dielectric, fluorocarbon (k=2.2), deposited by a new microwave excited plasma enhanced CVD was successfully integrated into Cu damascene interconnects. A practical nitrogen plasma treatment was also developed as a post dry etch process to minimize damage introduction to fluorocarbon in following damascene process. Electrical characteristics of leakage current significantly improved with low effective dielectric constant (k_eff=2.5). Thermal stress test results of both blanket film and Cu damascene lines reveal that the new fluorocarbon film indicates sufficient thermal stability.

Keywords

copper; integrated circuit interconnections; plasma CVD; thermal stability; thermal stresses; Cu; copper damascene interconnects; damascene process; dielectric constant; dry etch process; fluorocarbon film; microwave excited plasma enhanced CVD; nitrogen plasma treatment; organic low-k fluorocarbon dielectric; organic nonporous low-k dielectric; thermal stability; thermal stress test; Capacitance; Copper; Dielectric constant; Films; Leakage current; Microwave theory and techniques; Plasmas;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940345

Filename

5940345