Robust low-voltage program-erasable capacitors of Pd-Al2O3-Si with high density Ru-based nanocrystals embedded

Author

Gou, Hong-Yan ; Ding, Shi-Jin ; Sun, Qing-Qing ; Zhang, David Wei

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Pd electrode-based metal-oxide-semiconductor (MOS) capacitors with high density Ru-based nanocrystals in atomic-layer-deposited Al₂O₃ dielectric have been fabricated and electrically characterized, exhibiting robust programming and erasing characteristics even under low voltages. Further, the tunable memory characteristics of the MOS capacitors are demonstrated by varying the tunneling-layer (T)/blocking-layer (B) thickness ratio, and the underlying mechanisms are addressed.

Keywords

MOS capacitors; aluminium compounds; atomic layer deposition; dielectric materials; low-power electronics; nanostructured materials; palladium; ruthenium; silicon; MOS capacitors; Pd electrode; Pd-Al₂O₃-Si; Ru-based nanocrystals; atomic layer deposition; blocking-layer; dielectrics; low-voltage capacitors; metal-oxide-semiconductor capacitors; program-erasable capacitors; tunneling-layer; Aluminum oxide; Annealing; Capacitors; Films; Nanocrystals; Programming; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940355

Filename

5940355