• DocumentCode
    2011617
  • Title

    Advances in power MOSFET technologies for automotive applications

  • Author

    Owyang, King ; Bulucea, Constantin ; Hshieh, Flu-Iuan ; Yilmaz, Hamza

  • Author_Institution
    Siliconix Inc., Santa Clara, CA, USA
  • fYear
    1989
  • fDate
    28-29 Aug 1989
  • Firstpage
    9
  • Lastpage
    14
  • Abstract
    Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resistance of 1.7 mΩ-cm2, about half the value obtained by present production DMOS devices. The second is a trench DMOS technology developed to yield 1.1 mΩcm2 of specific on-resistance. Devices fabricated from both technologies exhibit superior rugged device performances in unclamped inductive switching (UIS). Design and process considerations are also discussed
  • Keywords
    automotive electronics; insulated gate field effect transistors; power transistors; 60 V; UIS; automotive applications; power MOSFET; rugged device performances; specific on-resistance; submicron channel DMOS technology; unclamped inductive switching; Automotive applications; Automotive engineering; Epitaxial layers; FETs; Low voltage; MOSFET circuits; Power MOSFET; Process design; Production; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Automotive Power Electronics, 1989
  • Conference_Location
    Dearborn, MI
  • Type

    conf

  • DOI
    10.1109/APE.1989.97148
  • Filename
    97148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2011617