• DocumentCode
    2012289
  • Title

    Advancing high performance heterogeneous integration through die stacking

  • Author

    Madden, Liam ; Wu, Ephrem ; Kim, Namhoon ; Banijamali, Bahareh ; Abugharbieh, Khaldoon ; Ramalingam, Suresh ; Wu, Xin

  • Author_Institution
    Xilinx, Inc., San Jose, CA, USA
  • fYear
    2012
  • fDate
    17-21 Sept. 2012
  • Firstpage
    18
  • Lastpage
    24
  • Abstract
    This paper describes the industry´s first heterogeneous Stacked Silicon Interconnect (SSI) FPGA family (3D integration). Each device is housed in a low-temperature co-fired ceramic (LTCC) package for optimal signal integrity. Inside the package, a heterogeneous IC stack delivers up to 2.78Tb/s transceiver bandwidth. The resulting bandwidth is approximately three times that achievable in a monolithic solution. Mounted on a passive silicon interposer with through-silicon vias (TSVs), the heterogeneous IC stack comprises FPGA ICs with 13.1-Gb/s transceivers and dedicated analog ICs with 28-Gb/s transceivers. Optimization took place concurrently on multiple facets of the design which were necessary to successfully implement the 3-D integration. In particular, this paper outlines the choices that were made in terms of package substrate material and interposer resistivity in order to optimize 28Gb/s system channel characteristics. These choices were validated through extensive electrical simulation and test chip correlation. In addition, this paper describes the design and timing verification of inter-die interconnects, an area that the electronic design automation industry had not yet fully addressed. This paper further describes 3D thermal-mechanical modeling and analysis for package reliability. The modeling was performed to address package coplanarity issues and stresses imposed by the interposer on the active dice, the low-k dielectric material, the micro-bumps and the C4 attach. The results indicate heterogeneous stacked-silicon (3D) integration is a reliable method to build very high-bandwidth multi-chip devices that exceed current monolithic capabilities.
  • Keywords
    ceramic packaging; electronic design automation; field programmable gate arrays; integrated circuit interconnections; microassembling; three-dimensional integrated circuits; 3D integration; 3D thermal-mechanical modeling; C4 attach; FPGA IC; LTCC package; SSI FPGA; TSV; bit rate 13.1 Gbit/s; bit rate 28 Gbit/s; die stacking; electronic design automation industry; heterogeneous IC stack; heterogeneous stacked silicon interconnect; heterogeneous stacked-silicon; high performance heterogeneous integration; inter-die interconnects; interposer resistivity; low-k dielectric material; low-temperature co-fired ceramic; micro-bumps; multichip device; optimal signal integrity; package coplanarity; package reliability; package substrate material; passive silicon interposer; through-silicon vias; transceiver; Analytical models; Field programmable gate arrays; Frequency measurement; Noise; Silicon; Substrates; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
  • Conference_Location
    Bordeaux
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-1707-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2012.6343325
  • Filename
    6343325