DocumentCode
2012311
Title
A 26ps Selective Epitaxial Bipolar Technology
Author
Meister, T.F. ; Meul, H.W. ; Stengl, R. ; Hartwig, D. ; Weyl, R. ; Kerner, I. ; Mahnkopf, R. ; Schreiter, R. ; Weng, J. ; Kopl, R.
Author_Institution
Siemens AG, Corporate Research and Development, Munchen
fYear
1991
fDate
28-30 May 1991
Firstpage
67
Lastpage
68
Keywords
Bipolar transistors; Capacitance; Circuits; Contacts; Doping profiles; Electric breakdown; Electric resistance; Epitaxial growth; Fabrication; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location
Oiso, Japan
Type
conf
DOI
10.1109/VLSIT.1991.705993
Filename
705993
Link To Document