DocumentCode
2012449
Title
Future directions in semiconductor technology for automotive power electronics
Author
Baliga, B.Jayant
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
1989
fDate
28-29 Aug 1989
Firstpage
36
Abstract
The authors reports on a panel session which was organized to discuss developments in power semiconductor technology suitable for automotive applications. The panel was chaired by the author, and the panel members were Kailash Jain, King Owyang, Miro Glogolja, Larry Latham, and Bill Dunn. The topics covered were device breakdown voltage specification, the best devices for low and high voltages, discrete vs. monolithic chip partitioning, the possibility of a generic chip, and the possible evolution of application-specific ICs (ASIC). A summary of the general conclusions made by the panel are provided
Keywords
automotive electronics; semiconductor technology; ASIC; application-specific ICs; automotive power electronics; device breakdown voltage specification; discrete chip partitioning; generic chip; monolithic chip partitioning; semiconductor technology; Automotive applications; Automotive engineering; Breakdown voltage; Conferences; Costs; Low voltage; MOSFET circuits; Power MOSFET; Power engineering computing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Automotive Power Electronics, 1989
Conference_Location
Dearborn, MI
Type
conf
DOI
10.1109/APE.1989.97152
Filename
97152
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