• DocumentCode
    2012500
  • Title

    Thermoelectric properties of small diameter Bi nanowires: Evidence for surface charges

  • Author

    Huber, T.E. ; Nikolaeva, A.A. ; Gitsu, D.V. ; Konopko, L.A. ; Graf, M.J.

  • Author_Institution
    Laser Lab., Howard Univ., Washington, DC
  • fYear
    2006
  • fDate
    6-10 Aug. 2006
  • Firstpage
    224
  • Lastpage
    227
  • Abstract
    The thermoelectric properties of quasi-one-dimensional systems attract considerable attention. Semimetallic bismuth, aside from being a good thermoelectric material, has charge carriers with very low effective masses, and, as a result, electronic quantum confinement effects induce a semimetal-to-semiconductor transformation (SMSC) for wires with diameters below roughly 50 nm. Theoretical work based on one-dimensional models indicate that fine Bi wires may exhibit superior thermoelectric properties since the density of states at the Fermi level can be tuned to very high values in this case. However, angle-resolved photoemission spectroscopy (ARPES) studies of Bi surfaces have shown that Bi nanowires support surface states, with high carrier densities of around 5 times 1012 cm-2 and large effective mass, that have not been considered in current models of the SMSC. Our studies of Shubnikov-de Haas oscillations for 30-nm diameter Bi nanowires support this model. According to our estimates, the thermopower of this two dimensional sheet of charge should be observable and we carried out an experimental study of the thermopower of arrays of small diameter Bi nanowires to test these conflicting models of fine Bi nanowires
  • Keywords
    Fermi level; Shubnikov-de Haas effect; bismuth; carrier density; effective mass; electrical conductivity transitions; electronic density of states; nanowires; photoelectron spectra; surface states; thermoelectric power; 2D charge sheet thermopower; 30 nm; ARPES; Bi; Fermi level density of states; SMSC models; Shubnikov-de Haas oscillations; angle resolved photoemission spectroscopy; array thermopower; bismuth nanowire thermoelectric properties; bismuth nanowires; carrier density; electronic quantum confinement effects; low effective mass charge carriers; quasi-1D system thermoelectric properties; semimetal-semiconductor transformation; semimetallic bismuth; surface charges; surface states; thermoelectric material; Bismuth; Charge carriers; Effective mass; Nanowires; Photoelectricity; Potential well; Rough surfaces; Surface roughness; Thermoelectricity; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2006. ICT '06. 25th International Conference on
  • Conference_Location
    Vienna
  • ISSN
    1094-2734
  • Print_ISBN
    1-4244-0811-3
  • Electronic_ISBN
    1094-2734
  • Type

    conf

  • DOI
    10.1109/ICT.2006.331337
  • Filename
    4133275