• DocumentCode
    2012549
  • Title

    Quantum model of 1D and 2D Child-Langmuir law

  • Author

    Ang, L.K.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2003
  • fDate
    5-5 June 2003
  • Firstpage
    189
  • Abstract
    Summary form only given, as follows. Summary form only given. In the emerging field of nanotechnology, miniature structures such as nanogaps, nanowires, and nanotubes ranging from <10 to 100s nanometer can be readily fabricated. As a result, vacuum microelectronics (VME) has emerged as a new inter-disciplinary research area, which deals with vacuum devices of micrometer dimensions (or less) that are made by microfabrication techniques developed for semiconductor industry. In VME, interaction of an intense electron beam with its surrounding miniature structures is important in characterizing the device operation However, there is still no fundamental understanding of the interaction of an intense electron beam with its surrounding nanostructures. The classical one dimensional (ID) Child-Langmuir (CL) law gives the maximum current density that can be transported across a planar gap. It is only recently that the 1D CL law is extended to a simple two-dimensional (2D) model. In this paper, we will present a quantum model of the 1D and 2D classical CL law based on a mean-field theory.
  • Keywords
    nanotechnology; tunnelling; vacuum microelectronics; 1D Child-Langmuir law; 2D Child-Langmuir law; applied voltage; current density; curvature; electron emission energy level; electron tunneling; emission surface; finite emission width; gap spacing; geometrical shapes; mean-field theory; nanogaps; nanotechnology; nanotubes; nanowires; quantum exchange-correlation effects; quantum model; vacuum microelectronics; Current density; Electron beams; Electronics industry; Microelectronics; Nanotechnology; Nanotubes; Nanowires; Quantum mechanics; Semiconductor nanostructures; Vacuum technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
  • Conference_Location
    Jeju, South Korea
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-7911-X
  • Type

    conf

  • DOI
    10.1109/PLASMA.2003.1228657
  • Filename
    1228657