DocumentCode
2012743
Title
Static and low frequency noise characterization of densely packed CNT-TFTs
Author
Joo, Min-Kyu ; Kim, Un Jeong ; Jeon, Dae-Young ; Park, So Jeong ; Mouis, Mireille ; Kim, Gyu-Tae ; Ghibaudo, Gérard
Author_Institution
IMEP-LAHC, Grenoble INP-MINATEC, Grenoble, France
fYear
2012
fDate
17-21 Sept. 2012
Firstpage
129
Lastpage
132
Abstract
Static and low frequency noise (LFN) characterrizations in densely packed single-walled carbon nanotube thin film transistors (CNT-TFTs) are presented. To this end, the Y function method (YFM) is employed for parameter extraction in order to alleviate the influence of the channel access resistance. The low field mobility (μ0), threshold voltage (Vth), mobility attenuation factor (θ) and on/off current ratio have been evaluated with respect to gate mask length (Lmask). The 1/f behavior of LFN has been interpreted with the carrier number and correlated mobility fluctuation model (CNF-CMF). A detailed analysis of the defect density surrounding the surface of carbon nanotube and the Coulomb scattering parameter has also been performed.
Keywords
carbon nanotubes; carrier mobility; thin film transistors; 1/f behavior; CNF-CMF; Coulomb scattering parameter; LFN characterrization; Y function method; YFM; carrier number; channel access resistance; correlated mobility fluctuation model; defect density; densely packed CNT-TFT; gate mask length; low field mobility; low frequency noise characterization; mobility attenuation factor; on-off current ratio; parameter extraction; single-walled carbon nanotube thin film transistor; static noise characterization; threshold voltage; Capacitance; Carbon nanotubes; Fluctuations; Logic gates; Low-frequency noise; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location
Bordeaux
ISSN
1930-8876
Print_ISBN
978-1-4673-1707-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2012.6343350
Filename
6343350
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