• DocumentCode
    2012743
  • Title

    Static and low frequency noise characterization of densely packed CNT-TFTs

  • Author

    Joo, Min-Kyu ; Kim, Un Jeong ; Jeon, Dae-Young ; Park, So Jeong ; Mouis, Mireille ; Kim, Gyu-Tae ; Ghibaudo, Gérard

  • Author_Institution
    IMEP-LAHC, Grenoble INP-MINATEC, Grenoble, France
  • fYear
    2012
  • fDate
    17-21 Sept. 2012
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    Static and low frequency noise (LFN) characterrizations in densely packed single-walled carbon nanotube thin film transistors (CNT-TFTs) are presented. To this end, the Y function method (YFM) is employed for parameter extraction in order to alleviate the influence of the channel access resistance. The low field mobility (μ0), threshold voltage (Vth), mobility attenuation factor (θ) and on/off current ratio have been evaluated with respect to gate mask length (Lmask). The 1/f behavior of LFN has been interpreted with the carrier number and correlated mobility fluctuation model (CNF-CMF). A detailed analysis of the defect density surrounding the surface of carbon nanotube and the Coulomb scattering parameter has also been performed.
  • Keywords
    carbon nanotubes; carrier mobility; thin film transistors; 1/f behavior; CNF-CMF; Coulomb scattering parameter; LFN characterrization; Y function method; YFM; carrier number; channel access resistance; correlated mobility fluctuation model; defect density; densely packed CNT-TFT; gate mask length; low field mobility; low frequency noise characterization; mobility attenuation factor; on-off current ratio; parameter extraction; single-walled carbon nanotube thin film transistor; static noise characterization; threshold voltage; Capacitance; Carbon nanotubes; Fluctuations; Logic gates; Low-frequency noise; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
  • Conference_Location
    Bordeaux
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-1707-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2012.6343350
  • Filename
    6343350