• DocumentCode
    2013429
  • Title

    Random Telegraph Signal noise properties of HfOx RRAM in high resistive state

  • Author

    Puglisi, Francesco M. ; Pavan, Paolo ; Padovani, Andrea ; Larcher, Luca ; Bersuker, Gennadi

  • Author_Institution
    Dipt. di Ing. dell´´Inf., Univ. di Modena e Reggio Emilia, Modena, Italy
  • fYear
    2012
  • fDate
    17-21 Sept. 2012
  • Firstpage
    274
  • Lastpage
    277
  • Abstract
    In this paper we analyze Random Telegraph Signal (RTS) noise in hafnium-based RRAMs. RTS is measured in HRS, showing fast and slow multilevel switching events. RTS characteristics are examined through novel color-coded time-lag plots and Hidden Markov Model (HMM) time-series analyses. Noise is examined at different reset conditions to provide new insights on conduction mechanisms in HRS. Higher reset voltages result in an enhanced complexity in RTS due to a larger number of active traps.
  • Keywords
    hidden Markov models; random-access storage; signal processing; telegraphy; time series; HMM; RRAM; RTS characteristics; color-coded time-lag plots; hidden Markov model; high resistive state; random telegraph signal noise properties; time-series analyses; Approximation methods; Fluctuations; Hafnium compounds; Hidden Markov models; Noise; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
  • Conference_Location
    Bordeaux
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-1707-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2012.6343386
  • Filename
    6343386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2013429