• DocumentCode
    2013608
  • Title

    Silicon-on-insulator technology impacts on SRAM testing

  • Author

    Adams, R. Dean ; Shephard, Phil, III

  • Author_Institution
    Int. Bus. Machines, Essex Junction, VT, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    43
  • Lastpage
    47
  • Abstract
    Silicon-on-insulator (SOI) SRAMs have different characteristics from those fabricated in traditional bulk silicon. Fault models and sensitivities must be considered when testing for SOI manufacturing defects. Circuit details of SOI SRAMs that relate to testing are presented and a new pattern is described which covers the related fault models
  • Keywords
    SRAM chips; fault simulation; integrated circuit testing; production testing; silicon-on-insulator; SRAM testing; fault models; manufacturing defects; sensitivities; silicon-on-insulator technology; Decision support systems; FETs; Random access memory; Silicon on insulator technology; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Test Symposium, 2000. Proceedings. 18th IEEE
  • Conference_Location
    Montreal, Que.
  • ISSN
    1093-0167
  • Print_ISBN
    0-7695-0613-5
  • Type

    conf

  • DOI
    10.1109/VTEST.2000.843825
  • Filename
    843825
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2013608