Electronic Transport Properties of Sn-doped CoSb3 Prepared by Encapsulated Induction Melting

Te-doped CoSb₃ skutterudites were prepared by encapsulated induction melting, and their thermoelectric and electronic transport properties were investigated. Single delta-phase was successfully obtained by the subsequent annealing at 773K for 24 hours. Seebeck coefficient and Hall coefficient confirmed that all the Te-doped CoSb₃ showed the n-type conductivity. Te atoms successfully acted as electron donors by substituting Sb atoms. Seebeck coefficient and electrical resistivity decreased with increasing the Te content. Thermal conductivity was considerably reduced by doping due to the electron-phonon scattering and the lattice contribution was dominant over the electronic contribution. Dimensionless thermoelectric figure of merit was remarkably improved by Te doping and Te atom is a very effective dopant for CoSb₃ skutterudite