DocumentCode
2013758
Title
Investigation of the Magnesium Silicide -- Mg2Si Films
Author
Kamilov, T.S. ; Kabilov, D.K. ; Kamilova, R.Kh. ; Azimov, M.E. ; Klechkovskaya, V.V. ; Orekhov, A.S. ; Suvorova, E.I.
Author_Institution
Tashkent State Aviation Inst.
fYear
2006
fDate
6-10 Aug. 2006
Firstpage
468
Lastpage
469
Abstract
The silicides are ecologically friendly materials and they have a mechanical stability to corrosion, oxidation, decay and aggressive environments. It is known that a bulk magnesium silicide - Mg2Si demonstrates semiconductor conductivity n-type character with energy band gap Eg=0.78 eV and solid solution based on the Mg2Si-Mg2Sn have figure of merit of ZT>1 [Samsonov, et. al. 1979]. Only small part of articles has devoted to thin Mg2Si films on silicon. In this work the magnesium silicide films have been grown on silicon substrate by reactive diffusion method and their thermoelectric properties were investigated
Keywords
diffusion; electrical conductivity; energy gap; magnesium compounds; semiconductor thin films; thermoelectricity; Mg2Si; Si; corrosion resistance; decay resistance; energy band gap; magnesium silicide films; merit figure; oxidation resistance; reactive diffusion method; semiconductor thin films; solid solutions; thermoelectricity; Conducting materials; Conductivity; Corrosion; Magnesium compounds; Oxidation; Semiconductor films; Semiconductor materials; Silicides; Silicon; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location
Vienna
ISSN
1094-2734
Print_ISBN
1-4244-0810-5
Electronic_ISBN
1094-2734
Type
conf
DOI
10.1109/ICT.2006.331316
Filename
4133331
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