The design of magnetoresistive devices

Author

Everitt, B.A.

Author_Institution

Nonvolatile Electron. Inc., Eden Prairie, MN, USA

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

119

Abstract

Magnetoresistive materials exhibiting either the conventional anisotropic magnetoresistance (AMR) effect or the giant magnetoresistance (GMR) effect are used in many applications including magnetic field sensing and nonvolatile random access memory. Several types of materials exhibit the GMR effect including multilayers, sandwich material, single- and double spin valves, and granular materials. Properties of the different types of MR materials are compared, and typical field sensing strategies are discussed. New materials exhibiting the spin dependent tunneling (SDT) and colossal magnetoresistance (CMR) effects may be used in the next generation of magnetic devices

Keywords

giant magnetoresistance; magnetic anisotropy; magnetic multilayers; magnetic sensors; magnetoresistive devices; random-access storage; anisotropic magnetoresistance; colossal magnetoresistance; field sensing strategies; giant magnetoresistance; granular materials; magnetic field sensing; magnetoresistive devices; multilayers; nonvolatile random access memory; sandwich material; spin dependent tunneling; spin valves; Anisotropic magnetoresistance; Colossal magnetoresistance; Giant magnetoresistance; Magnetic materials; Magnetic multilayers; Magnetic tunneling; Magnetoresistive devices; Nonvolatile memory; Random access memory; Spin valves;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1996., IEEE 39th Midwest symposium on

Conference_Location

Ames, IA

Print_ISBN

0-7803-3636-4

Type

conf

DOI

10.1109/MWSCAS.1996.594051

Filename

594051