Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells

Author

Kumtornkittikul, C. ; Waki, Ichitaro ; Li, Ning ; Otani, Hiroshi ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan

Volume

1

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

140

Abstract

We propose waveguide structures for ultrafast optical devices utilizing intersubband absorption in GaN-based multiple quantum wells grown with metalorganic vapor phase epitaxy. The proposed structure can efficiently enhance absorption in the GaN/AlN MQW structure suitable for device fabrication.

Keywords

III-V semiconductors; MOCVD; gallium compounds; high-speed optical techniques; optical waveguides; quantum well devices; semiconductor quantum wells; vapour phase epitaxial growth; GaN-AlN; GaN-based quantum wells; MOVPE-grown quantum wells; device fabrication; intersubband absorption; metalorganic vapor phase epitaxy; multiple quantum wells; ultrafast optical devices; ultrafast photonic devices; waveguide structure; Absorption; Epitaxial growth; Gallium nitride; Optical device fabrication; Optical devices; Optical refraction; Optical variables control; Optical waveguides; Quantum well devices; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363150

Filename

1363150