MBE growth of GaPxAs1−x and GaSbxAs1−x solid solutions with As2 or As4 molecular beam

The composition of multicomponent AIIIBV solid solutions allows designing semiconductor heterostructures with desired properties to solve the so-called problem of “band engineering”. Growth of solid solution with given composition is a serious problem. Prediction of solid solution composition based on the growth model could facilitate solution of this task. Information about interaction of group V molecules with the growth surface is required to create such a model. Therefore, determination of adsorption, desorption, diffusion, and incorporation kinetic constants for these molecules is an important task. This can be achieved through a comparative analysis of incorporation effectiveness of antimony, phosphorus, and arsenic from different molecular forms.