24 GHz InGaP-GaAs HBT push-push VCO with broadband tuning range

Author

Kozhuharov, Rumen ; Kuylestierna, Dan ; Zirath, Herbert

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

242

Lastpage

245

Abstract

A push-push topology MMIC microstrip VCO with output taken from tank common-node has been designed and implemented in an InGaP/GaAs HBT process. It provides an output at second harmonic at 24 GHz and differential output for PLL at 12 GHz. The oscillator shows an excellent phase noise performances of -93 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic output at 100 kHz offset from the carrier. Different doping profile varactors are investigated and VCO tuning range larger than 35% is obtained.

Keywords

III-V semiconductors; MMIC oscillators; bipolar MMIC; gallium arsenide; gallium compounds; indium compounds; voltage-controlled oscillators; HBT push-push VCO; InGaP-GaAs; broadband tuning range; doping profile varactors; frequency 12 GHz; frequency 24 GHz; oscillator; phase noise; push-push topology MMIC microstrip VCO; second harmonic output; tank common-node; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microstrip; Phase locked loops; Phase noise; Topology; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296025