• DocumentCode
    2014924
  • Title

    Delta Iddq for testing reliability

  • Author

    Powell, Theo J. ; Pair, James ; John, Melissa St ; Counce, Doug

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    439
  • Lastpage
    443
  • Abstract
    Point defects, which cause small current increases and potentially early failures, can be masked by increased chip background currents at elevated temperatures. The difficulty of screening point defects will likely also occur in denser geometries. Delta Iddq is shown to help distinguish between early fail and reliable chips at these elevated temperatures. Memory application demonstrates that a variety of delta Iddq tests can screen early fail defects
  • Keywords
    CMOS integrated circuits; application specific integrated circuits; failure analysis; integrated circuit reliability; integrated circuit testing; ASICs; CMOS; Delta Iddq; chip background currents; denser geometries; early failures; elevated temperatures; point defects; testing reliability; Application specific integrated circuits; Geometry; Hip; Instruments; Logic testing; Manufacturing; Stress; Tellurium; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Test Symposium, 2000. Proceedings. 18th IEEE
  • Conference_Location
    Montreal, Que.
  • ISSN
    1093-0167
  • Print_ISBN
    0-7695-0613-5
  • Type

    conf

  • DOI
    10.1109/VTEST.2000.843876
  • Filename
    843876