DocumentCode
2015074
Title
Kinetics of transient photocurrents in PbSnTe∶In films exposed to THz radiation
Author
Klimov, Alexander E. ; Kubarev, Vitaly V. ; Palkin, Alexander M. ; Pashchin, Nikolai S. ; Shumsky, Vladimir N. ; Epov, Vladimir S.
Author_Institution
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear
2010
fDate
June 30 2010-July 4 2010
Firstpage
395
Lastpage
399
Abstract
The results of an experimental study of the kinetics of photocurrent rise in PbSnTe:In films exposed at T=4.2 K to free-electron laser radiation of wavelengths 68, 123, and 205 μm are reported. The obtained data are analyzed within the model of space-charge-limited injection currents that flow in a material with electron traps.
Keywords
IV-VI semiconductors; electron traps; indium; lead compounds; photoconductivity; semiconductor thin films; space-charge-limited conduction; terahertz wave spectra; tin compounds; transients; PbSnTe:In; THz radiation exposure; electron traps; free-electron laser radiation; space-charge-limited injection currents; transient photocurrent kinetics; wavelength 123 mum; wavelength 205 mum; wavelength 68 mum; Atomic measurements; Films; Legged locomotion; Physics; PbSnTe∶In; THz radiation; photocurrent; traps;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-6626-9
Type
conf
DOI
10.1109/EDM.2010.5568667
Filename
5568667
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