DocumentCode
2015233
Title
Quantum dot semiconductor lasers
Author
Reithmaier, J.P. ; Deubert, S. ; Somers, Andre ; Kaiser, William ; Forchel, A. ; Calligaro, M. ; Michel, N. ; Bansropun, S. ; Krakowski, M. ; Sumpf, Bernd ; Erbert, Gotz ; Fricke, J. ; Trankle, Gunther ; Hadass, D. ; Bilenca, Alberto ; Dery, H. ; Eisenste
Author_Institution
Tech. Phys., Wurzburg Univ., Germany
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
204
Abstract
Quantum dot lasers for 980 nm high brightness high power applications and for long wavelength telecom applications based on InP were developed. Recent results will be presented and partially discussed in comparison to QW lasers.
Keywords
III-V semiconductors; indium compounds; optical communication equipment; quantum dot lasers; 980 nm; InP; InP-based lasers; high brightness applications; high power applications; long wavelength telecom applications; quantum dot lasers; semiconductor lasers; Brightness; Optical materials; Power generation; Power lasers; Quantum dot lasers; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Temperature dependence; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363182
Filename
1363182
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