• DocumentCode
    2015480
  • Title

    The radiation-hardened voltage references on bipolar and JFET transistors

  • Author

    Starchenko, E.I. ; Prokopenko, N.N. ; Budyakov, P.S.

  • Author_Institution
    Don State Tech. Univ., Rostov-on-Don, Russia
  • fYear
    2015
  • fDate
    1-4 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This article reviews the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and pJFET transistors. The new circuitry of the voltage references is suggested for BiFET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=1013 ÷ 1014 n/cm2 acceptable for many applications.
  • Keywords
    bipolar transistors; junction gate field effect transistors; radiation hardening (electronics); reference circuits; semiconductor device models; BiFET; bipolar transistors; microelectronic products; npn-type transistors; pJFET transistors; radiation hardness; radiation-hardened voltage references; temperature-stable voltage references; Integrated circuit modeling; JFETs; Neutrons; Resistors; Temperature dependence; Temperature distribution; JFET; radiation hardness; temperature drift; voltage reference;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GCC Conference and Exhibition (GCCCE), 2015 IEEE 8th
  • Conference_Location
    Muscat
  • Type

    conf

  • DOI
    10.1109/IEEEGCC.2015.7060065
  • Filename
    7060065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2015480