Modelling and design of a wideband 6–18 GHz GaN Resistive Mixer

Author

Giacomo, Valeria Di ; Thouvenin, Nicolas ; Gaquière, Christophe ; Santarelli, Alberto ; Filicori, Fabio

Author_Institution

Dept. of Electron., Univ. of Bologna, Bologna, Italy

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

459

Lastpage

462

Abstract

A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 mum² AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss < 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; aluminium compounds; field effect MMIC; gallium compounds; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; application-specific empirical transistor model; cold-FET mixer; frequency 6 GHz to 18 GHz; large-signal condition; single-ended circuit topology; small-signal condition; wideband hybrid AlGaN/GaN resistive mixer; Aluminum gallium nitride; Bandwidth; Circuit simulation; Circuit topology; Frequency conversion; Gallium nitride; HEMTs; Mixers; Radio frequency; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296059