Nucleation of Ge nanoislands on Si by pulsed ion irradiation

Author

Kuchinskaya, PoHna A. ; Smagina, Zhanna V. ; Zinoviev, Vladimir A. ; Dvurechenskii, Anatoly V.

Author_Institution

Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2010

fDate

June 30 2010-July 4 2010

Firstpage

3

Lastpage

5

Abstract

The effect of ion beam irradiation on nucleation and growth of three-dimensional (3D) Ge islands on Si (100) substrate was investigated. It was found that pulsed ion-beam action during heteroepitaxy leads to the increase of 3D islands density, decrease of their size and improvement of the size uniformity. To reveal the mechanisms of observed effects Monte Carlo simulation was made. It was shown that the density of 3D islands and their size distribution depend on the ion penetration depth and moment of ion-beam action on the growing surface during Ge/Si heteroepitaxy.

Keywords

Monte Carlo methods; elemental semiconductors; germanium; ion beam effects; island structure; nanofabrication; nanostructured materials; semiconductor growth; 3D islands density; Ge; Monte Carlo simulation; Si; Si (100) substrate; heteroepitaxy; ion penetration depth; nanoislands; nucleation; pulsed ion beam irradiation; three-dimensional islands; Deformable models; Ions; Lattices; Molecular beam epitaxial growth; Quantum dots; Seminars; Simulation; heteroepitaxy; interstitials; ion irradiation; nanoislands;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-6626-9

Type

conf

DOI

10.1109/EDM.2010.5568688

Filename

5568688