CF/sub 4/ decomposition using RF plasma

Author

Yamamoto, Takayuki ; Mine, J. ; Kuroki, Tomoyuki ; Okubo, Masaaki

Author_Institution

Osaka Prefecture Univ., Sakai, Japan

fYear

2003

fDate

5-5 June 2003

Firstpage

277

Abstract

Summary form only given, as follows. Per-fluorinated compounds (PFCs) and hydrofluorinated compounds (HFCs) such as NF/sub 3/, CF/sub 4/, C/sub 2/F/sub 6/, CHF/sub 3/ and SF/sub 6/ from semiconductor gas are being regulated internationally because their gases cause green effect and have more than 5,000 times global warming potential in comparison of CO/sub 2/. PFCs are used as wafer etching and clean up of chemical vapor deposition chambers. Our study focused on CF/sub 4/ decomposition, because CF/sub 4/ is one of the most stable gases among PFCs and their decomposition is extremely difficult. The decomposition of 100% CF/sub 4/ was investigated at low pressure (/spl sim/53.3 Pa) using the inductive coupled plasma (ICP) reactor, which can be used to generate remote plasma as wafer etching process and chamber cleaning using the same power supply.

Keywords

high-frequency discharges; organic compounds; plasma applications; plasma chemistry; plasma density; 53.3 Pa; CF/sub 4/ decomposition; RF plasma; hydrofluorinated compounds; inductive coupled plasma reactor; perfluorinated compounds; removal efficiency; Chemical vapor deposition; Etching; Gases; Global warming; Hybrid fiber coaxial cables; Inductors; Noise measurement; Plasma applications; Plasma stability; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1228822

Filename

1228822