DocumentCode
2016194
Title
Post-growth enhancement of p-GaN conductivity
Author
Karouta, F. ; Kappers, M.J. ; Krämer, M. C J C M ; Jacobs, B.
Author_Institution
Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
284
Abstract
The paper reports on the investigation an improvement of the p-type conductivity of Mg-doped GaN by creating Ga-vacancies in the lattice.
Keywords
III-V semiconductors; gallium compounds; impurity-vacancy interactions; magnesium; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; Ga-vacancies; GaN:Mg; p-GaN conductivity; post-growth enhancement; Bonding; Conductivity; Epitaxial growth; Etching; Gallium nitride; Hydrogen; Lattices; Materials science and technology; Nitrogen; Rapid thermal annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363222
Filename
1363222
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