DocumentCode
2016268
Title
New plasma source for plasma immersion ion implantation
Author
Li, L.H. ; Poon, R.W.Y. ; Kwok, S.C.H. ; Chu, Paul K.
Author_Institution
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China
fYear
2003
fDate
5-5 June 2003
Firstpage
279
Abstract
Summary form only given, as follows. Plasma immersion ion implantation (PIII) is a useful niche technology for the modification of surface properties of materials and industrial components that are large or have an irregular shape. The samples are immersed in an overlying plasma from which ions are extracted and implanted into the samples. A plasma source is typically needed to supply the ions a novel method to create ions from solid materials possessing low melting point and high vapor pressure using an evaporation-glow discharge hybrid technique. The elements investigated are sulfur, phosphorus, and sodium that are very important in biomaterials. Using this method, sulfur is vaporized first, and then the vapor is introduced into a small glass-shielded chamber to lessen contamination of the big vacuum chamber. Sulfur is then ionized and passed into the PIII chamber to carry out plasma implantation and deposition.
Keywords
glow discharges; plasma immersion ion implantation; plasma sources; XPS depth profiling; big vacuum chamber; biomaterials; evaporation-glow discharge hybrid technique; glass-shielded chamber; implantation results; plasma immersion ion implantation; Biological materials; Contamination; Fault location; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sources; Shape; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1228825
Filename
1228825
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