Influence of Gate Insulator Engineering on the electronic transport of AlGaN/GaN MISHFETs: A simulation study for performance optimization and non linear device modeling

Author

Aggarwal, Ruchika ; Agrawal, Anju ; Gupta, Mridula ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

230

Lastpage

233

Abstract

In this paper the influence of Gate Insulator Engineering (GIE) on the electronic transport of AlGaN/GaN MISHFET (Metal Insulator Semiconductor Heterostructure Field Effect Transistor) is investigated using ATLAS-3D device simulator and presented as an optimization tool for microwave applications. Important transport characteristics viz. channel potential and electric field are evaluated and interpreted for all the structures. Results reveal improved carrier transport properties for GIE structures in comparison to conventional MISHFET structures.

Keywords

III-V semiconductors; MISFET; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; transport processes; ATLAS-3D device simulator; AlGaN-GaN; MISHFET; carrier transport; channel potential; electric field; electronic transport; gate insulator engineering; metal insulator semiconductor heterostructure field effect transistor; microwave device; nonlinear device modeling; performance optimization; transport characteristics; Aluminum gallium nitride; Dielectrics and electrical insulation; Electrons; Frequency; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Microwave devices; Optimization;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296087