A WiMedia UWB transmitter up to 9GHz in 65nm CMOS and Wafer-Level Fabricated Package

Author

Yim, Jounghyun ; Kang, Byoungjoong ; Kim, Taewan ; Ko, Won ; Shin, Heeseon ; Ko, Sangsoo ; Ryu, Inhyo ; Yang, Sung-Gi ; Bae, Jong-Dae ; Park, Hojin

Author_Institution

SAMSUNG Electron. Co., Ltd., Yongin, South Korea

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

A 3.1-4.7GHz and 6.3-9GHz RF transmitter fabricated in a 65nm CMOS technology and packaged with a Wafer-level Fabricated Package (WFP) is presented. For high frequency and wideband performances, all the effects of package are considered and loopback paths with a power detector are implemented. A new structure of T/R switch is devised for the low noise performance of Rx and the high linearity of Tx. With these circuits, the transmitter features high linearity, low power consumption and small chip area meeting all the WiMedia PHY spec.

Keywords

CMOS integrated circuits; field effect MMIC; low-power electronics; microwave receivers; radio transmitters; ultra wideband communication; wafer level packaging; CMOS technology; RF transmitter; WiMedia PHY spec; WiMedia UWB transmitter; frequency 3.1 GHz to 4.7 GHz; frequency 6.3 GHz to 9 GHz; frequency 9 GHz; low power consumption; power detector; size 65 nm; wafer-level fabricated package; CMOS integrated circuits; Calibration; Impedance matching; Mixers; Radio frequency; Switches; Transmitters; CMOS; Loopback; MB-OFDM; RF Transmitter; Switch; UWB;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940610

Filename

5940610