DocumentCode
2017202
Title
A 1.3mW 20dB gain low power inductorless LNA with 4dB Noise Figure for 2.45GHz ISM band
Author
Belmas, François ; Hameau, Frédéric ; Fournier, Jean-Michel
Author_Institution
LETI, CEA, Grenoble, France
fYear
2011
fDate
5-7 June 2011
Firstpage
1
Lastpage
4
Abstract
This paper presents an inductorless low power (LP) low noise amplifier (LNA) based on a Common Gate (CG) topology. The circuit combines gain boosting techniques to enable high gain LP LNA. The circuit is integrated in a 130nm CMOS technology and shows 20dB gain with 4dB Noise Figure and -12dBm IIP3. The power consumption is 1.32mW from a 1.2V supply.
Keywords
CMOS analogue integrated circuits; UHF amplifiers; low noise amplifiers; power inductors; CG topology; CMOS technology; ISM band; common gate topology; frequency 2.45 GHz; gain 20 dB; gain boosting technique; low noise amplifier; low power inductorless LNA; noise figure 4 dB; power 1.3 mW; power consumption; size 130 nm; voltage 1.2 V; Bandwidth; CMOS integrated circuits; Gain; Impedance; Logic gates; Noise; Noise measurement; 2.4GHz; ISM; LNA; Low Power; inductorless;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location
Baltimore, MD
ISSN
1529-2517
Print_ISBN
978-1-4244-8293-1
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2011.5940636
Filename
5940636
Link To Document