Study of photoelectric spectroselective multichannel photocells for photodetectors based on the bulk integrated p-n junctions

The study of the photoelectrical processes in the photosensitive structures based on multichannel bulk integrated p-n junctions is presented in this paper. The distribution of electrical potential and intensity of the electrical field, as well as absorption of the optical radiation in the spatial charge region (SCR) multichannel bulk integrated structure are considered. The processes of photorelaxation, charge accumulation and spectral characteristics of the photosensitivity in the bulk integrated n- and p- areas in photosensitive structures are studies. The design parameters of semiconductor layers and permissible values of control voltages have been obtained. Noise characteristics and circuit features of the photosensitive cell with bulk integrated p-n junctions are considered.