118GHz fundamental VCO with 7.8% tuning range in 65nm CMOS

Author

Volkaerts, Wouter ; Steyaert, Michiel ; Reynaert, Patrick

Author_Institution

ESAT/MICAS, Katholieke Univ. Leuven, Leuven, Belgium

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents a 118 GHz fundamental voltage controlled oscillator in a 65 nm low power CMOS technology. Using accumulation mode varactors, the oscillator covers a frequency range from 113.4 GHz to 122.6 GHz, which corresponds to a 7.8% tuning range. This is the widest tuning range in a D-band VCO reported to date. Combined with a variable supply voltage, the tuning range is extended to 11 GHz (9.3%). The VCO draws 5.6 mA from a 1 V supply and the output is higher than -28.5 dBm. The measured phase noise at 118.3 GHz is -83.9 dBc/Hz at 1 MHz offset. The FOMT is -175.7 dB, which is the highest reported for a D-band VCO.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; millimetre wave oscillators; voltage-controlled oscillators; D-band VCO; accumulation mode varactors; current 5.6 mA; frequency 113.4 GHz to 122.6 GHz; fundamental VCO; fundamental voltage controlled oscillator; low-power CMOS technology; phase noise; size 65 nm; tuning range; voltage 1 V; CMOS integrated circuits; Capacitance; Power transmission lines; Transmission line measurements; Tuning; Varactors; Voltage-controlled oscillators; CMOS integrated circuits; D-band; Millimeter wave; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940642

Filename

5940642