Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design

Author

Negre, Laurent ; Roy, David ; Cacho, Florian ; Scheer, Patrick ; Boret, Samuel ; Zaka, Alban ; Gloria, Daniel ; Ghibaudo, Gerard

Author_Institution

STMicroelectronics, Crolles, France

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

In the framework of MOSFET reliability for mixed-analog application, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stress with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.

Keywords

MOSFET; ageing; integrated circuit design; integrated circuit modelling; integrated circuit reliability; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; DC stress; MOSFET RF parameters; MOSFET reliability; PSP compact model; RF design; RF stress; compact modeling; mixed-analog application; size 40 nm; Aging; Degradation; Integrated circuit modeling; MOSFET circuits; Radio frequency; Scattering parameters; Stress; MOSFET; hot carrier; model; radio frequency; reliability; stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940645

Filename

5940645