DocumentCode
2017513
Title
ESD protection for sub-45 nm MugFET technology
Author
Natarajan, Mahadevan Iyer ; Thijs, Steven ; Tremouilles, David ; Linten, D. ; Collaert, Nadine ; Jurczak, Malgorzata ; Groeseneken, Guido
Author_Institution
Silterra Malaysia Sdn. Bhd., Kulim
fYear
2007
fDate
11-13 July 2007
Abstract
From the design point of view, while such technology options may result in increased transistor performance, the ability to achieve sufficient product reliability is to be addressed. Among the industry accepted reliability requirements, electrostatic discharge (ESD) reliability assessment is the focus of this work.
Keywords
MOSFET; electrostatic discharge; nanoelectronics; semiconductor device reliability; ESD protection; MugFET technology; electrostatic discharge reliability; product reliability; size 45 nm; CMOS process; CMOS technology; Diodes; Electrostatic discharge; High-K gate dielectrics; MOS devices; Protection; Robustness; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location
Bangalore
Print_ISBN
978-1-4244-1014-9
Type
conf
DOI
10.1109/IPFA.2007.4378077
Filename
4378077
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