• DocumentCode
    2017755
  • Title

    A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS

  • Author

    Zhang, Ronghui ; Acar, Mustafa ; Van der Heijden, Mark P. ; Apostolidou, Melina ; De Vreede, Leo C N ; Leenaerts, Domine M W

  • Author_Institution
    Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2011
  • fDate
    5-7 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A 65nm CMOS broadband two-stage class-E power amplifier (PA) using high voltage extended-drain devices is presented. To reduce the peak drain-source voltage and improve reliable operation, sub-optimum class-E operation is applied. The PA is followed by a broadband output matching network implemented as an off-chip two-stage LC ladder. The measurements with a 5.0V supply voltage for the power stage and 2.4V for the driver stage show a drain efficiency >; 67% and a power-added efficiency (PAE) >; 52% with a Pout >; 30dBm within 550MHz-1050MHz. The output power variation is within 1.0dB and efficiency variation is less than 13%. The highest efficiency is observed at 700MHz with peak drain efficiency of 77% and peak PAE of 65% at a Pout of 31dBm and 17dB power gain. By using dynamic supply modulation, the PA achieves a PAE of 40% and a drain efficiency of 60% at 10dB power back-off from 30dBm.
  • Keywords
    CMOS analogue integrated circuits; driver circuits; power amplifiers; CMOS; broadband output matching network; class-E power amplifier; driver stage; dynamic supply modulation; frequency 550 MHz to 1050 MHz; high voltage extended-drain device; off-chip two-stage LC ladder; peak drain-source voltage reduction; power-added efficiency; size 65 nm; voltage 2.4 V; voltage 5 V; Broadband communication; CMOS integrated circuits; CMOS technology; Impedance; Impedance matching; Power generation; Switches; Broadband; CMOS power amplifier; class-E;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
  • Conference_Location
    Baltimore, MD
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-8293-1
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2011.5940653
  • Filename
    5940653