Laterally-Doped Channel(LDC) Structure for Sub-Quarter Micron MOSFETs

Author

Matsuki, T. ; Asakura, F. ; Saitoh, S. ; Matsumoto, H. ; Fukuma, M. ; Kawamura, N.

Author_Institution

Microelectronics Research Laboratories, NEC Corporation, Japan

fYear

1991

fDate

28-30 May 1991

Firstpage

113

Lastpage

114

Keywords

Annealing; Boron; Degradation; Electric resistance; Hot carriers; Immune system; Impurities; MOSFETs; National electric code; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on

Conference_Location

Oiso, Japan

Type

DOI

10.1109/VLSIT.1991.706016

Filename

706016

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