The Defects of Silicon Reacted with Carbon Content Vapour in ULSI Nano-meter-Generation Technology

Author

Po-Ying Chen ; Shen-Li Chen ; Ming-Hsiung Tsai ; Jing, M.H. ; Lin, Tzu-Chiao ; Cheng-Chia Kuo

Author_Institution

I-Shou Univ., Kaohsiung

fYear

2007

fDate

11-13 July 2007

Abstract

This investigation considers in detail a defect called "silicon substrate damaged defects" and also introduces these defects\´ forming mechanisms and their root causes. These defects are likely to become increasing important in the future of deep-sub micrometer ULSI\´s situation. Two conditions typically result in silicon damaged defects during manufacturing processes namely: (1) watermark with carbon content and (2) the electrical charges accumulated on the silicon wafer surface.

Keywords

ULSI; oxidation; ULSI nanometer generation technology; carbon content vapour; electrostatic charges; organic contamination; oxide growth; silicon substrate damaged defects; watermark defects; Detectors; Fabrication; MOS capacitors; Manufacturing processes; Oxidation; Pollution measurement; Silicon; Surface contamination; Surface morphology; Ultra large scale integration; Electrostatic charges; organic contamination; oxide growth; silicon damaged defects; water mark defects;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the

Conference_Location

Bangalore

Print_ISBN

978-1-4244-1014-9

Type

conf

DOI

10.1109/IPFA.2007.4378101

Filename

4378101