A fully integrated 60GHz distributed transformer power amplifier in bulky CMOS 45nm

Author

Essing, Jaap ; Mahmoudi, Reza ; Pei, Yu ; Van Roermund, Arthur

Author_Institution

Mixed-signal Microelectron., Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper describes a fully integrated differential power amplifier (PA) operating at 60 GHz ISM band and implemented in 45nm CMOS technology. The PA is based on a distributed active transformer (DAT) topology which enables simultaneous power combining and realization of an efficient impedance matching. To cope with the asymmetric nature of DAT, resulting in common-mode and unequal differential voltage-swings at its input-ports, this paper presents two universal methods which do not impose any layout restrictions and layout adjustments. The realized PA achieves 13.2dBm output power at 1dB compression, a saturated output power of 16.3dBm, a PAE of 8.7% and 18.7dBm OIP3, while consuming 178mA at 1.8V.

Keywords

CMOS integrated circuits; impedance matching; power amplifiers; power combiners; transformers; CMOS; ISM band; common-mode; current 178 mA; distributed active transformer topology; frequency 60 GHz; impedance matching; integrated distributed transformer power amplifier; power combining; size 45 nm; voltage 1.8 V; CMOS integrated circuits; CMOS technology; Circuit faults; Gain; Inductors; Power generation; Topology; 60GHz; CMOS integrated circuits; Distributed active transformer; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940684

Filename

5940684